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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5632 2N5633 2N5634 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2N5632 VCBO Collector-base voltage 2N5633 2N5634 2N5632 VCEO Collector-emitter voltage 2N5633 2N5634 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25ae Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 10 150 150 -65~200 ae ae V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5632 VCEO(sus) Collector-emitter sustaining voltage 2N5633 2N5634 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5632 ICEO Collector cut-off current 2N5633 2N5634 ICEV IEBO Collector cut-off current (VBE(off)=1.5V) Emitter cut-off current 2N5632 hFE DC current gain 2N5633 2N5634 fT Transition frequency IC=1A ; VCE=20V IC=5A ; VCE=5V IC=7A; IB=0.7A IC=10A ;IB=2A IC=10A ;IB=2A IC=5A ; VCE=5V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 VCE=ratedVCB IC=0.2A ;IB=0 CONDITIONS SYMBOL 2N5632 2N5633 2N5634 MIN 100 120 140 TYP. MAX UNIT V 1.0 3.0 2.5 1.5 V V V V 1.0 mA 1.0 mA 5.0 1.0 25 20 15 1.0 100 80 60 MHz mA VCE=ratedVCB; TC=150ae VEB=7V; IC=0 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5632 2N5633 2N5634 Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) JMnic |
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